Title :
Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution
Author :
Dumas, J.M. ; Lecrosnier, D. ; Paugam, J. ; Vuchener, C.
Author_Institution :
CNET, LAB/ICM, Lannion, France
Abstract :
A gradual degradation has been observed in the RF performance of GaAs power FETs. Electrical and physical analyses have been carried out, indicating the role played by the surface. A plasma enhanced chemical vapour deposited silicon nitride film is established as a suitable surface passivation.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; passivation; power transistors; reliability; GaAs power MESFET; RF performance; plasma enhanced CVD Si3N4; reliability; surface passivation; surface-induced degradation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850080
