DocumentCode :
1005828
Title :
Comment on ´Linear, electronically tunable resistor´
Author :
Tsividis, Yannis ; Vavelidis, Kostis
Author_Institution :
Nat. Tech. Univ. of Athens, Greece
Volume :
29
Issue :
6
fYear :
1993
fDate :
3/18/1993 12:00:00 AM
Firstpage :
556
Lastpage :
557
Abstract :
For the original article see ibid., vol.28, no.25, p.2303-5 (1992). A method to linearise the channel of a MOSFET by applying appropriate bias voltages across its gate and body (both considered as resistors) has recently been published by the commenters. They would like to add one paper by R.W. Coen and R.S. Muller (see Solid State Electron. vol.23, p.35-40, 1980) to the list of References; in that paper, the application of bias across a resistive gate has been reported as part of a procedure for measuring carrier velocity.
Keywords :
MOS integrated circuits; active networks; linear integrated circuits; resistors; tuning; MOSFET; bias voltages; carrier velocity measurement; channel linearisation; electronically tunable resistor; resistive gate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930371
Filename :
256280
Link To Document :
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