Title :
Comment on ´Linear, electronically tunable resistor´
Author :
Tsividis, Yannis ; Vavelidis, Kostis
Author_Institution :
Nat. Tech. Univ. of Athens, Greece
fDate :
3/18/1993 12:00:00 AM
Abstract :
For the original article see ibid., vol.28, no.25, p.2303-5 (1992). A method to linearise the channel of a MOSFET by applying appropriate bias voltages across its gate and body (both considered as resistors) has recently been published by the commenters. They would like to add one paper by R.W. Coen and R.S. Muller (see Solid State Electron. vol.23, p.35-40, 1980) to the list of References; in that paper, the application of bias across a resistive gate has been reported as part of a procedure for measuring carrier velocity.
Keywords :
MOS integrated circuits; active networks; linear integrated circuits; resistors; tuning; MOSFET; bias voltages; carrier velocity measurement; channel linearisation; electronically tunable resistor; resistive gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930371