Title :
Low dark current InGaAs PIN photodiodes grown by molecular beam epitaxy
Author :
Cinguino, P. ; Genova, F. ; Rigo, C. ; Stano, A.
Author_Institution :
CSELT¿Centro Studi e Laboratori Telecomunicazioni, Torino, Italy
Abstract :
High-quality InGaAs PIN photodiodes have been made from high-purity layers grown on InP substrate by molecular beam epitaxy. The diodes are top-illuminated mesa-type passivated and planarised by polyimide. The devices exhibit dark current densities as low as 2.3 × 10¿5 A/cm2 at ¿10 V with a breakdown voltage of ¿80 V. These values are comparable with those obtained by other more conventional growth techniques, and are the best so far reported by MBE.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor growth; InGaAs PIN photodiodes; InP substrate; breakdown voltage -80 V; dark current density 2.3Ã\x9710-5 A/cm2; mesatype passivated diodes; molecular beam epitaxy; polyimide planarisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850099
