Title :
Polarisation-dependent gain-current relationship in InGaAs/InGaAlAs/InAlAs SCH-MQW laser diodes
Author :
Wakita, Ken ; Kawamura, Yuriko ; Asahi, H.
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
The polarisation-dependent gain spectra were measured at ¿190 C for InGaAs InGaAlAs InAlAs SCH-MQW laser diodes. The peak gain for TE polarisation was much larger (>750 cm¿1) than that for TM polarisation, while the peak gain difference for InGaAs InAlAs DH lasers was as small as 15 cm¿1. This peak gain difference for SCH-MQW lasers is surprisingly larger than that for GaAs GaAlAs MQW lasers. This difference was explained by the polarisation-related selection rules for optical transition.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; polarisation; semiconductor junction lasers; III-V semiconductors; InGaAs/InGaAlAs/InAlAs; TE polarisation; TM polarisation; laser diodes; multi quantum well; optical transition; peak gain difference; polarisation-dependent gain spectra; polarisation-related selection rules; separate confinement heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850136
