Title :
Deposition and properties of polycrystalline β-SiC films using LPCVD with different dopant amount
Author :
Noh, S. ; Fu, X. ; Chen, L. ; Mehregany, M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
fDate :
6/22/2006 12:00:00 AM
Abstract :
The physical and electrical properties of polycrystalline β-SiC were studied according to different nitrogen doping concentration. The crystalline peaks SiC(111), SiC(220), SiC(311) and SiC(222) appeared in XRD analysis of poly-SiC films deposited on Si substrates covered with thermally-grown SiO2. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The size of resistance ratio was much bigger in films with low doping. On the other hand, the linearity of resistance variation was better in films with high doping.
Keywords :
chemical vapour deposition; nitrogen; scanning electron microscopy; semiconductor doping; semiconductor thin films; silicon compounds; wide band gap semiconductors; LPCVD; SiC:Ni; SiO2; XRD analysis; dopant amount; nitrogen doping concentration; polycrystalline films; resistance ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060865
