Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Author

Storm, D.F. ; Roussos, J.A. ; Katzer, D.S. ; Mittereder, J.A. ; Bass, R. ; Binari, S.C. ; Hanser, D. ; Preble, E.A. ; Evans, K.

Author_Institution

Electron. Sci. & Technol. Div., US Naval Res. Lab., Washington, DC, USA

Volume

42

Issue

11

fYear

2006

fDate

5/25/2006 12:00:00 AM

Firstpage

663

Lastpage

665

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) by plasma-assisted molecular beam epitaxy on free-standing GaN substrates grown by hydride vapour phase epitaxy (HVPE) have been fabricated. Hall measurements yielded typical electron mobilities of 1750 cm/sup 2//Vs with sheet densities of 1.1/spl times/10/sup 13/ cm/sup -2/. Off-state breakdown voltages as high as 200 V were measured on unpassivated devices. Output power density at 4 GHz was measured to be 5.1 W/mm at a power-added efficiency of 46% and an associated gain of 13.4 dB. This constitutes significant improvement of RF performance by MBE-grown AlGaN/GaN HEMTs on free-standing HVPE GaN.

Keywords

Hall mobility; III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; microwave field effect transistors; molecular beam epitaxial growth; power HEMT; semiconductor device breakdown; semiconductor device measurement; vapour phase epitaxial growth; wide band gap semiconductors; 13.4 dB; 4 GHz; AlGaN-GaN; HVPE substrates; Hall measurements; Hall mobility; MBE-grown HEMT; electron mobilities; electron sheet density; free-standing GaN substrates; high electron mobility transistors; hydride vapour phase epitaxy; microwave power performance; off-state breakdown voltage; plasma-assisted molecular beam epitaxy; power-added efficiency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20060648

Filename

1648624