• DocumentCode
    1007172
  • Title

    High-frequency modulation of 1.52 μm vapour-phase-transported InGaAsP lasers

  • Author

    Bowers, John E. ; Koch, T.L. ; Hemenway, B.R. ; Wilt, D.P. ; Bridges, T.J. ; Burkhardt, E.G.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, USA
  • Volume
    21
  • Issue
    7
  • fYear
    1985
  • Firstpage
    297
  • Lastpage
    299
  • Abstract
    We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 3 dB bandwidth; HF modulation; InGaAsP lasers; nonlinear limitations; parasitic capacitance; semiconductor laser; vapour-phase-transported laser structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850213
  • Filename
    4251035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1007172