A novel CMOS hairpin resonator using slow-wave structure

Author

Chirala, M.K. ; Nguyen, C.

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

Volume

15

Issue

8

fYear

2005

Firstpage

527

Lastpage

529

Abstract

A novel hairpin resonator incorporating a defective uniplanar compact photonic bandgap (D-UCPBG) slow-wave structure has been developed using monolithic silicon-based CMOS technology and the impact of the D-UCPBG slow wave feature on the hairpin resonator performance is presented. Two stepped impedance hairpin resonators of equal dimensions, one with a solid ground plane and another with a D-UCPBG structure, were implemented in the TSMC 0.25 μm RF-mixed signal fabrication process. The D-UCPBG incorporated hairpin resonator resonates at 4.5 GHz, a significant frequency reduction from 10.2 GHz, the resonant frequency of the solid ground plane based hairpin resonator. The loaded Q of the resonator also increases from 5.8 for the solid ground plane resonator to 13 for the D-UCPBG structure.

Keywords

CMOS integrated circuits; field effect MMIC; microstrip resonators; photonic band gap; radiofrequency integrated circuits; slow wave structures; 0.25 micron; 10.2 GHz; 4.5 GHz; CMOS RFIC; RF-mixed signal fabrication process; TSMC; defective uniplanar compact photonic bandgap; frequency reduction; hairpin resonator; monolithic silicon-based CMOS technology; resonant frequency; slow-wave structure; solid ground plane; Arm; CMOS technology; Fabrication; Frequency; Impedance; Photonic band gap; Radiofrequency integrated circuits; Resonance; Signal processing; Silicon; CMOS RFIC; hairpin resonators; resonators; slow wave structures;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.852796

Filename

1471733