AlGaN/InGaN HEMTs for RF current collapse suppression

Author

Lanford, W. ; Kumar, V. ; Schwindt, R. ; Kuliev, A. ; Adesida, I. ; Dabiran, A.M. ; Wowchak, A.M. ; Chow, P.P. ; Lee, J.-W.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA

Volume

40

Issue

12

fYear

2004

fDate

6/10/2004 12:00:00 AM

Firstpage

771

Lastpage

772

Abstract

A report is made on the DC, RF and large-signal pulsed characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on sapphire substrates. The devices with a 0.5 μm gate-length exhibited relatively flat transconductance (g_m) with a maximum drain current of 880 mA/mm, a peak g_m of 156 mS/mm, an f_T of 17.3 GHz, and an f_MAX of 28.7 GHz. In addition to promising DC and RF results, pulsed I-V measurements reveal that there is little current collapse in the AlGaN/InGaN HEMTs. These results indicate that the output power of InGaN channel HEMTs should not be limited by surface-state-related current collapse.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor epitaxial layers; wide band gap semiconductors; 0.5 micron; 17.3 GHz; 28.7 GHz; Al₂O₃; AlGaN-InGaN-GaN; HEMT; RF current collapse suppression; drain current; flat transconductance; gate length; high electron mobility transistors; molecular beam epitaxy; sapphire substrates; signal pulsed characteristics; surface state related current collapse;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20040398

Filename

1305495