Title :
Current/voltage characteristic of CuInSe2 homojunctions
Author :
Shih, I. ; Qiu, C.X.
Author_Institution :
McGill University, Electrical Engineering Department, Montreal, Canada
Abstract :
Temperature-dependent forward-current/voltage characteristics of In- and Bi-diffused CuInSe2 homojunctions have been investigated over a temperature range from 200 to 300 K. It has been found that the junction current in the medium voltage range was dominated by the recombination mechanism in the depletion region. The activation energy of saturation current was about 0.95 eV, which is consistent with the energy gap value of crystalline CuInSe2.
Keywords :
bismuth; copper compounds; electron-hole recombination; indium; indium compounds; p-n homojunctions; semiconductor doping; ternary semiconductors; 200 to 300K; Bi dopant; CuInSe2 homojunctions; CuInSe2:Bi; CuInSe2:In; In dopant; activation energy; depletion region; forward-current/voltage characteristics; junction current; medium voltage range; recombination mechanism; saturation current; semiconductor materials; temperature dependence; transport mechanism;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850247
