Title :
Directional couplers realized on silicon-on-insulator
Author :
Cao, G.B. ; Gao, F. ; Jiang, J. ; Zhang, F.
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
An asymmetrical rib configuration of directional couplers was demonstrated numerically and experimentally. With this geometry structure, the effective coupling lengths were shortened to half of the conventional ones. These new 3-dB and cross couplers were fabricated on silicon-on-insulator wafers, with the measured insertion loss 2.3 dB, nonuniformity 0.2 dB. The full vector H~ field finite edge element method was applied to the design and analysis.
Keywords :
integrated optics; optical design techniques; optical directional couplers; optical losses; silicon-on-insulator; 2.3 dB; Si; asymmetric rib configuration; cross couplers; directional couplers; finite edge element method; full vector field; insertion loss; integrated optics; silicon-on-insulator; Directional couplers; Etching; Geometry; Integrated optics; Optical devices; Optical losses; Optical waveguides; Ribs; Silicon on insulator technology; Wires; Integrated optics; optical directional couplers; silicon-on-insulator (SOI);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.851959
