Title :
Narrow spectral linewidth characteristics of monolithic integrated-passive-cavity InGaAsP/InP semiconductor lasers
Author :
Fujita, Takashi ; Ohya, J. ; Matsuda, Keisuke ; Ishino, Masanori ; Sato, Hikaru ; Serizawa, H.
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Central Research Laboratory, Moriguchi, Japan
Abstract :
The spectral linewidth of 1.3 ¿m monolithic integrated-passive-cavity (IPC) semiconductor laser is measured by a delayed self-heterodyne technique. It is found that the line-width is narrowed when longitudinal submode is suppressed. The narrowest linewidth obtained so far is 900 kHz at 6 mW output power.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 6 mW output power; 900 kHz; III-V semiconductors; delayed self-heterodyne technique; integrated-passive-cavity InGaAsP/InP semiconductor lasers; longitudinal submode; spectral linewidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850267
