Title :
Resistivity variations in ion implanted silicon detectors
Author :
Rijken, H.A. ; Klein, S.S. ; Ligthart, W.C.M. ; de Voigt, M.J.A. ; Burger, P.
Author_Institution :
Eindhoven Univ. of Technol., Netherlands
fDate :
8/1/1993 12:00:00 AM
Abstract :
Some ion implanted Si detectors which are specially developed for timing experiments show timing response variations of a few times 100 ps as a function of the position of irradiation. These variations are caused by resistivity variations of a few times 10%. To quantify these resistivity variations, depletion depth studies are performed for a set of detectors. Best timing results are obtained with a high resistivity overdepleted detector
Keywords :
electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; ion implantation; semiconductor counters; depletion depth; high resistivity overdepleted detector; ion implanted Si detectors; resistivity variations; timing response variations; Alpha particles; Conductivity; Cyclotrons; Delay effects; Detectors; Semiconductor counters; Silicon; Surface resistance; Time factors; Timing;
Journal_Title :
Nuclear Science, IEEE Transactions on
