Title :
InGaAs photodiodes prepared by low-pressure MOCVD
Author :
Poulain, P. ; Razeghi, M. ; Kazmierski, K. ; Blondeau, R. ; Philippe, Pernelle
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
InGaAs/InP double-heterostructure PIN photodiodes are demonstrated using the low-pressure MOCVD growth technique. Several types of detectors are reported, ranging from small-area ones suitable for PINFET implementation to broad-area general-purpose devices for both long- and short-wavelength applications. These diodes have performances equivalent to those obtained when using conventional growth techniques.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; III-V semiconductors; InGaAs/InP double-heterostructure PIN photodiodes; PINFET implementation; broad-area general-purpose devices; growth techniques; long-wavelength applications; low-pressure MOCVD; low-pressure MOCVD growth technique; short-wavelength applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850314
