Frequency dependence of source access resistance of heterojunction field-effect transistor

Author

Versnaeyen, C. ; Vanoverschelde, A. ; Cappy, A. ; Salmer, G. ; Schortgen, M.

Author_Institution

UniversitÃ© des Sciences et Techniques de Lille 1, Centre HyperfrÃ©quences et Semiconducteurs, Laboratoire associÃ© au CNRS 287, Villeneuve d´Ascq, France

Volume

21

Issue

12

fYear

1985

Firstpage

539

Lastpage

541

Abstract

The determination of the source resistance in a heterojunction field-effect transistor is investigated. Classical methods as well as zero drain-source impedance measurements give a frequency dependence of the equivalent access resistance. This effect is due to the particular configuration of the access zone which is constituted by the GaAlAs layer and the two-dimensional electron gas. It may be represented by a distributed circuit with the equivalent resistances of these layers and the heterojunction capacitance. The noise factor dependence on R5 is considered and comments on the influence of technological parameters of the structure are made.

Keywords

III-V semiconductors; aluminium compounds; electric resistance; equivalent circuits; gallium arsenide; high electron mobility transistors; p-n heterojunctions; semiconductor device models; solid-state microwave devices; 6 to 18 GHz; GaAlAs layer; GaAs/GaAlAs; HEMT; III-V semiconductors; TEGFET; distributed circuit; equivalent resistances; frequency dependence; heterojunction capacitance; heterojunction field-effect transistor; high electron mobility transistors; microwave performance; models; noise factor dependence; solid-state microwave devices; source access resistance; technological parameters; two-dimensional electron gas; zero drain-source impedance measurements;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19850381

Filename

4251304