Title :
Novel technique for measurement of MOSFET threshold voltage at very low channel currents
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
A curve tracer reveals a low-level current `spike¿ in the gate-source characteristic of enhancement-mode MOSFETs. The origin of this spike is explained, and its use in measuring the threshold voltage of any MOSFET at a vanishingly small channel current is described. The technique also identifies whether the MOSFET is n-channel or p-channel, enhancement-mode or depletion-mode.
Keywords :
insulated gate field effect transistors; semiconductor device testing; voltage measurement; MOSFET; depletion-mode; enhancement-mode; gate-source characteristic; low-level current spike; mode/type identification; n-channel; p-channel; threshold voltage; very low channel currents; voltage measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850384
