Title :
SiO2/native double-gate InSb MOSFETs
Author :
Takahashi, Tatsuro ; Sugiura, O. ; Watanbe, I. ; Matsumura, Mieko
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
An InSb MOS double-gate structure formed by a novel thermal oxidation method has been investigated. C/V characteristics showed a sharp change and no hysteresis. Both n-channel and p-channel MOSFETs have been successfully operated. The effective mobility at 77 K was approximately 7800 cm2/Vs for the n-channel and 300 cm2/Vs for the p-channel.
Keywords :
III-V semiconductors; indium antimonide; insulated gate field effect transistors; oxidation; C/V characteristics; III-V semiconductors; InSb MOSFETs; MOS double-gate structure; SiO2/native-oxide double-gate; n-channel; p-channel; thermal oxidation method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850385
