Characterization of the response of a double side μ-strip silicon detector to X-rays in the diagnostic energy range

Author

Bandettini, A. ; Bencivelli, W. ; Bertolucci, E. ; Bottigli, U. ; Conti, Marco ; Del Guerra, A. ; Fantacci, Maria Evelina ; Randaccio, P. ; Rosso, V. ; Russo, P. ; Stefanini, A.

Author_Institution

Dipartimento di Fisica, Pisa Univ., Italy

Volume

40

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

983

Lastpage

986

Abstract

The use of a double side μ-strip silicon crystal for X-ray detection is investigated. The detector is 300 μm thick and the read-out pitch is 100 μm for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector is irradiated by ²⁴¹Am and ¹⁰⁹Cd sources. Different zones within the 100-μm read-out pitch are individually exposed. The following characteristics are studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution; and (d) the spatial resolution. The absolute efficiency of the detector is measured at three energy values

Keywords

X-ray detection and measurement; position sensitive particle detectors; radioisotope scanning and imaging; semiconductor counters; silicon; ¹⁰⁹Cd; ²⁴¹Am; Si; X-rays; absolute efficiency; capacitive charge division mode; charge collection mechanism; diagnostic energy range; double side μ-strip; energy resolution; floating strips; impact point; photon; read-out pitch; read-out strips; relative detection efficiency; response characterization; spatial resolution; Energy measurement; Energy resolution; Medical diagnostic imaging; Microstrip; Photonic crystals; Silicon; Spatial resolution; Strips; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.256697

Filename

256697