• DocumentCode
    1009843
  • Title

    Subpicosecond base transit time observed in a hot-electron transistor (HET)

  • Author

    Muto, Salvatore ; Imamura, Kousuke ; Yokoyama, Naoki ; Hiyamizu, S. ; Nishi, Hidetaka

  • Author_Institution
    Fujitsu Limited, Atsugi, Japan
  • Volume
    21
  • Issue
    13
  • fYear
    1985
  • Firstpage
    555
  • Lastpage
    556
  • Abstract
    It has been found that the transverse magnetic field drastically reduces the current gain of an AlGaAs/GaAs hot-electron transistor (HET) at 4.2 K. The result can be understood in terms of the cyclotron motion of hot electrons within the base layer (1000 Ã… thick). Estimated subpicosecond base transit time confirms the quasiballistic transport of hot electrons across the base layer of the HET.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; carrier mobility; gallium arsenide; high field effects; hot carriers; 4.2K; 4.5 T; AlGaAs/GaAs; HET; III-V semiconductors; cyclotron motion; double heterojunction; hot-electron transistor; quasiballistic transport; subpicosecond base transit time; transverse magnetic field;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850392
  • Filename
    4251321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009843