DocumentCode
1009992
Title
High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells
Author
Wakita, Ken ; Kawamura, Yuriko ; Yoshikuni, Y. ; Asahi, H.
Author_Institution
NTT Electrical Communications Laboratories, Atsugi, Japan
Volume
21
Issue
13
fYear
1985
Firstpage
574
Lastpage
576
Abstract
Sharp heavy-hole and light-hole excitons are clearly observed for the first time in InGaAs/InAlAs multiple-quantum-well (MQW) structures at temperatures ranging from ¿190°C to 70°C. The halfwidth of the heavy-hole exciton line is as narrow as 6.2 meV at room temperature. InGaAs/InAlAs MQWs are prepared in a PIN doped configuration by molecular beam epitaxy. An enhanced electroabsorption effect is also clearly observed in long-wavelength-region MQWs.
Keywords
III-V semiconductors; aluminium compounds; electroabsorption; excitons; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor superlattices; -190°C to 70°C; InGaAs/InAlAs; MBE; MQW; PIN diode; enhanced electroabsorption effect; heavy-hole exciton; high-temperature excitons; light-hole excitons; long-wavelength-region; molecular beam epitaxy; multiple quantum wells; optical fibre transmission; p-i-n doped configuration;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850406
Filename
4251338
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