Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications

Author

Son, Younghwan ; Baek, Chang-Ki ; Han, In-Shik ; Joo, Han-Soo ; Goo, Tae-Gyu ; Yoo, Ooksang ; Choi, Wonho ; Ji, Hee-Hwan ; Lee, Hi-Deok ; Kim, Dae M.

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

Volume

8

Issue

5

fYear

2009

Firstpage

654

Lastpage

658

Abstract

This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunction with the tunneling model of trapped charges. Nitrided oxide is widely used to improve the reliability of nanoscale MOSFETs because it can decrease the degradation of gate oxide due to the generation of traps therein. Based on the measurement, the optimum nitrogen concentration in such typical nitrided process is discussed in correlation with the gate oxide thickness for nanoscale CMOSFETs.

Keywords

MOSFET; charge pump circuits; nanotechnology; nitrogen compounds; depth profile; gate oxide thickness; multifrequency charge pumping technique; multitemperature charge pumping technique; nanoscale MOSFET applications; near-interface oxide trap density; nitrided oxides; nitrogen concentration; remote plasma nitrided oxides; thermally grown oxide; Multifrequency and multitemperature charge pumping (CP); oxide trap density; remote plasma nitrided oxide (RPNO);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2008.2009760

Filename

4689411