DocumentCode
1010445
Title
1.55 μm InGaAsP low-threshold buried-crescent injection laser
Author
Cheng, W.H. ; Perillo, L. ; Forouhar, S. ; Kim, O.K. ; Jiang, C.L. ; Sheem, S.K.
Author_Institution
Rockwell International Corporation, Collins Transmission System Division, Dallas, USA
Volume
21
Issue
19
fYear
1985
Firstpage
832
Lastpage
834
Abstract
Fabrication of 1.55 μm InGaAsP buried-crescent (BC) injection lasers with a p-n-p-n blocking structure is described. The BC lasers exhibit a threshold current as low as 14 mA at 25°C, very high yield, output power more than 10 mW and high-temperature operation up to 80°C. These BC lasers have continued to operate in stable CW mode at 50°C for more than 1000 h. The lifetime of the 1.55 μm InGaAsP lasers at 50°C is estimated to exceed about 2.5 × 104 h.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; InGaAsP low-threshold buried-crescent injection laser; high-temperature operation; lifetime; output power 10 mW; p- n- p- n blocking structure; semiconductor laser; stable CW mode; threshold current 14 mA; wavelength 1.55 microns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850588
Filename
4251389
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