Title :
A theory of voltage breakdown of cylindrical P-N junctions, with applications
Author :
Armstrong, Harold L.
Author_Institution :
Natl. Res. Council of Canada
Abstract :
In certain p-n junctions, such as those made by the alloy method, edges on the junction surface will, by field concentration, lead to lower inverse breakdown voltages than would otherwise be obtained. These edges are approximated by pieces of circular cylinders, and a formula for the voltage breakdown of a circular cylindrical junction obtained. The results agree qualitatively with those found for certain alloy-type diodes.
Keywords :
Breakdown voltage; Dielectric breakdown; Diodes; Electric breakdown; Electron devices; Electron mobility; Geometry; Helium; Lead; P-n junctions; Shape; Shape memory alloys;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1957.14194
