A proposed method for dynamic fitting of MOS model parameters

Author

Kovács, Ferenc ; Hosszú, Gábor

Author_Institution

Dept. of Electron Devices, Tech. Univ. of Budapest, Hungary

Volume

12

Issue

10

fYear

1993

fDate

10/1/1993 12:00:00 AM

Firstpage

1503

Lastpage

1507

Abstract

A method for optimization of MOS model parameters is introduced. The method is based upon dynamically fitting the measured frequency response of a reconfigurable ring oscillator. The ring oscillator contains two added switching transistors and two loading capacitors. By controlling the switching transistors, the capacitive load of the inverters and thus the oscillation frequency can be varied. The simulated and the measured frequencies are compared and the derived average error is minimized. Sequential iterations using combined mathematical methods are applied to the procedure. Simplifications are introduced in order to shorten the computational time. The effectiveness of the method on improving the accuracy of simulation is demonstrated with numerical examples

Keywords

MOS integrated circuits; frequency response; insulated gate field effect transistors; invertors; semiconductor device models; MOS model parameters; capacitive load; computational time; derived average error; dynamic fitting; frequency response; inverters; loading capacitors; optimization; reconfigurable ring oscillator; switching transistors; Circuit simulation; Circuit testing; Computational modeling; Frequency measurement; Frequency response; Inverters; Logic circuits; Optimization methods; Propagation delay; Ring oscillators;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.256924

Filename

256924