Title :
Direct bonding between InP and rare earth iron garnet grown on Gd 3Ga5O12 substrate by liquid phase epitaxy
Author :
Yokoi, Hiroshi ; Mizumoto, Tetsuya ; Maru, K. ; Naito, Yuta
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
fDate :
8/31/1995 12:00:00 AM
Abstract :
The bonding of InP and rare earth iron garnet grown on Gd3 Ga5O12 substrate without any additional material demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices
Keywords :
III-V semiconductors; garnets; heat treatment; indium compounds; liquid phase epitaxial growth; magnetic epitaxial layers; rare earth compounds; wafer bonding; Gd3Ga5O12; Gd3Ga5O12 substrate; H2; InP; InP-JkFe5O12; chemical treatment; direct bonding; heat treatment; integration; liquid phase epitaxy; magneto-optic devices; rare earth iron garnet; semiconductor devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951050
