Title :
Addendum: Enhanced performance of 2 μm N-MOSFETs in doubly recrystallised SOS films
Author :
Maddox, R.L. ; Golecki, I.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; ion implantation; 2 microns channel length; NMOS devices; Si ion implantation; Si-on-sapphire; amorphisation; back-channel leakage current; doubly recrystallised SOS films; field-effect channel electron mobility; monolithic IC; n+ Si gate isoplanar process; solid-phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850709
