• DocumentCode
    1011949
  • Title

    Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers

  • Author

    Wada, O. ; Sanada, T. ; Kuno, M. ; Fujii, T.

  • Author_Institution
    Fujitsu Limited, Atsugi, Japan
  • Volume
    21
  • Issue
    22
  • fYear
    1985
  • Firstpage
    1025
  • Lastpage
    1026
  • Abstract
    Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers were fabricated from a molecular-beam-grown GRIN-SCH wafer in which a superlattice buffer layer was introduced. Fabricated diodes exhibited excellent lasing characteristics including a very low threshold current of 5 mA with a T0 value as high as 160 K.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical waveguides; semiconductor junction lasers; AlGaAs/GaAs single-quantum-well lasers; low threshold current; molecular-beam-grown GRIN-SCH wafer; ridge waveguide laser; semiconductor laser; superlattice buffer layer; threshold current 5 mA;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850727
  • Filename
    4251557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011949