Monolithic integration of an amplifier and a phase modulator fabricated in a GRINSCH-SQW structure by placing the junction below the quantum well

Author

No, Kun H. ; Blackwell, Richard J. ; Herrick, Robert W. ; Levy, Joseph L.

Author_Institution

McDonnell Douglas Electron. Syst. Co., St. Louis, MO, USA

Volume

5

Issue

9

fYear

1993

Firstpage

990

Lastpage

993

Abstract

We present results of a novel semiconductor optical amplifier device in which an amplifier and a phase modulator are integrated into a fundamental transverse-mode ridge waveguide. By placing the p-n junction below the quantum well (QW) during epitaxial growth and utilizing the effect of the electric field on the depletion width, the phase of the light from an integrated optical amplifier-modulator is varied. For a modulation reverse bias voltage range of 0.4 V, we have demonstrated a 360 degrees /mm phase shift with less than 1.2 dB of amplitude modulation.<>

Keywords

integrated optoelectronics; optical modulation; optical waveguides; p-n junctions; phase modulation; semiconductor lasers; GRINSCH-SQW structure; amplitude modulation; depletion width; electric field; epitaxial growth; fundamental transverse-mode ridge waveguide; integrated optical amplifier-modulator; light phase; modulation reverse bias voltage range; monolithic integration; p-n junction; phase modulator; phase shift; quantum well; semiconductor optical amplifier; semiconductor optical amplifier device; Amplitude modulation; Epitaxial growth; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Optical waveguides; P-n junctions; Phase modulation; Semiconductor optical amplifiers; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257168

Filename

257168