Title :
High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs
Author :
Metze, Gerorge M. ; Bass, J.F. ; Lee, Timothy T. ; Cornfeld, A.B. ; Singer, J.L. ; Hung, Hing-Loi ; Huang, Ho-Chung ; Pande, Krishna P.
Author_Institution :
Commun. Satellite Corp., Clarksburg, MD, USA
Abstract :
State-of-the-art, 60-GHz, low-noise MMICs based on pseudomorphic modulation-doped FETs, with 0.25- mu m*60- mu m gates offset 0.3 mu m from the source ohmic, are discussed. Single-state low-noise amplifiers (LNAs) exhibited minimum noise figures of 2.90 dB with 4.1 dB of associated gain at 59.25 GHz. Dual-state MMICs had minimum noise figures of 3.5 dB and 10.8 dB of associated gain at 58.50 GHz. Cascaded four-stage LNAs (two dual-stage MMICs) had minimum noise figures of 3.7 dB and over 20.7 dB of associated gain at 58.0 GHz. Finally, when biased for maximum gain, the four-stage amplifier exhibited over 30.4 dB of gain at 60.0 GHz.<>
Keywords :
MMIC; high electron mobility transistors; microwave amplifiers; 0.25 micron; 10.8 dB; 2.90 dB; 20.7 dB; 3.5 dB; 3.7 dB; 30.4 dB; 4.1 dB; 58.0 GHz; 58.50 GHz; 59.25 GHz; 60 GHz; 60 micron; 60.0 GHz; V-band; cascaded four-stage low-noise amplifier; dual-stage MMIC; high gain; low-noise MMIC amplifiers; noise figures; pseudomorphic MODFETs; single-state low-noise amplifiers; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MESFETs; MMICs; MODFET circuits; Millimeter wave technology; Noise figure;
Journal_Title :
Electron Device Letters, IEEE
