Microalloy transistor

The microalloy transistor is fabricated by jet electrochemical techniques. It differs from the surface-barrier transistor (sbt) in that extremely shallow alloy contacts replace the surface-barrier contacts. The microalloy contacts are accomplished in a few seconds at a low alloy temperature by a fabrication technique which is described herein. The high-injection efficiency of the resulting contact makes possible increased efficiency of high-frequency transistors. This paper reviews the microalloying process in its application to both homogeneous and graded-base transistors and analyzes mathematically the microalloy emitter region.