Title :
SiGe/Si bifurcation optical active switch based on plasma dispersion effect
Author :
Gao, Y. ; Li, G.Z. ; Liu, X.D. ; Liu, E.K. ; Zhang, X.J. ; Lu, X.K. ; Hu, J.H. ; Wang, X.
Author_Institution :
Dept. of Electron. Eng., Xi´´an Jiaotong Univ., China
fDate :
9/28/1995 12:00:00 AM
Abstract :
Based on the plasma dispersion effect of Si1-xGex , 2×2 bifurcation optical active switches have been fabricated, in which the Si1-xGex was grown by molecular beam epitaxy. At a 36 mA injection current, the device reaches maximum optical switching. The crosstalk is less than -11 dB and the insertion loss is 3.8 dB. The measured response time is <100 ns
Keywords :
Ge-Si alloys; bifurcation; integrated optics; molecular beam epitaxial growth; optical crosstalk; optical losses; optical switches; optical waveguide components; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor plasma; 3.8 dB; 36 mA; SiGe-Si; bifurcation optical active switch; crosstalk; injection current; insertion loss; molecular beam epitaxy; plasma dispersion effect; response time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951204
