Title :
Polarisation changes in spontaneous emission from GaInAsP/InP two-dimensional photonic crystals
Author :
Baba, T. ; Matsuzaki, T.
fDate :
9/28/1995 12:00:00 AM
Abstract :
GaInAsP/InP strained quantum-well two-dimensional photonic crystals have been fabricated. The polarisation of photoluminescence radiating parallel to the substrate plane was changed from TE to TM when the photonic bandgap for TE-polarisation was designed to overlap with the emission energy. This is considered to be caused by the quantum confinement for photons and electrons
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; photoluminescence; photonic band gap; semiconductor quantum wells; spontaneous emission; GaInAsP-InP; GaInAsP/InP strained quantum-well; photoluminescence; photonic bandgap; polarisation; quantum confinement; spontaneous emission; two-dimensional photonic crystals;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951182
