DocumentCode
1012907
Title
Perpendicular anisotropy in Tb-Fe and Tb-Co amorphous films sputtered in H2 -added Ar gas
Author
Niihara, T. ; Takayama, S. ; Sugita, Y.
Author_Institution
Hitachi Ltd., Kokubunji, Tokyo, Japan
Volume
21
Issue
5
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1638
Lastpage
1640
Abstract
It has been found that the perpendicular anisotropy Ku in amorphous Tb-Fe and Tb-Co films prepared by rf sputtering changes remarkably when H2 gas is added to Ar sputtering gas. Ku in Tb-Fe films decreases with increasing H2 partial pressure, while Ku in Tb-Co films increases and reaches almost 106erg/cm3. The internal stress in the films changes slightly with increasing H2 partial pressure. Consequently, the change in Ku can not be explained in terms of magnetostriction. Mass spectroscopy shows that those films sputtered in H2 -added Ar gas contain H2 about three times more than those sputtered in pure Ar gas. It is likely that H2 induces change in microstructure in films causing large change in Ku. However, the mechanism and the reason for different behaviors between Tb-Fe and Tb-Co are not clear yet.
Keywords
Amorphous magnetic films/devices; Magnetooptic memories; Perpendicular magnetic anisotropy; Amorphous materials; Anisotropic magnetoresistance; Argon; Hydrogen; Internal stresses; Magnetic field measurement; Magnetostriction; Saturation magnetization; Sputtering; Substrates;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1064041
Filename
1064041
Link To Document