• DocumentCode
    1012907
  • Title

    Perpendicular anisotropy in Tb-Fe and Tb-Co amorphous films sputtered in H2-added Ar gas

  • Author

    Niihara, T. ; Takayama, S. ; Sugita, Y.

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1638
  • Lastpage
    1640
  • Abstract
    It has been found that the perpendicular anisotropy Ku in amorphous Tb-Fe and Tb-Co films prepared by rf sputtering changes remarkably when H2gas is added to Ar sputtering gas. Ku in Tb-Fe films decreases with increasing H2partial pressure, while Ku in Tb-Co films increases and reaches almost 106erg/cm3. The internal stress in the films changes slightly with increasing H2partial pressure. Consequently, the change in Ku can not be explained in terms of magnetostriction. Mass spectroscopy shows that those films sputtered in H2-added Ar gas contain H2about three times more than those sputtered in pure Ar gas. It is likely that H2induces change in microstructure in films causing large change in Ku. However, the mechanism and the reason for different behaviors between Tb-Fe and Tb-Co are not clear yet.
  • Keywords
    Amorphous magnetic films/devices; Magnetooptic memories; Perpendicular magnetic anisotropy; Amorphous materials; Anisotropic magnetoresistance; Argon; Hydrogen; Internal stresses; Magnetic field measurement; Magnetostriction; Saturation magnetization; Sputtering; Substrates;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1064041
  • Filename
    1064041