Title :
Advanced electrothermal Spice modelling of large power IGBTs
Author :
Azar, R. ; Udrea, F. ; Ng, W.T. ; Dawson, F. ; Findlay, W. ; Waind, P. ; Amaratunga, G.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
6/17/2004 12:00:00 AM
Abstract :
A novel IGBT electrothermal model is implemented for the first time in PSpice for the simulation of steady state and transient temperature dependent IGBT operation including self-heating and latchup. A thermal circuit representing the characteristics of the IGBT package is developed and validated against a finite element model and experimental results. A novel electrical IGBT model based on the Kraus model is developed to account for the electrical impact of instantaneous junction temperature variations owing to self-heating. The resulting electrothermal model is validated against experimental DC and transient FBSOA measurements.
Keywords :
insulated gate bipolar transistors; power transistors; 1200 V; 1700 V; 175 C; 600 V; 70 micron; IGBT chips; IGBT3; cell geometry; maximum junction temperature; on-state loss; pitch; short-circuit current; trench field stop technology; ultra thin wafer technology;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20040448
