• DocumentCode
    1013288
  • Title

    Simulation of submicrometer GaAs MESFET´s using a full dynamic transport model

  • Author

    Feng, Yu-kun ; Hintz, Adrian

  • Author_Institution
    Arbeitsbereich Hochfrequenztechnik, Tech. Univ. Hamburg-Harburg, West Germany
  • Volume
    35
  • Issue
    9
  • fYear
    1988
  • fDate
    9/1/1988 12:00:00 AM
  • Firstpage
    1419
  • Lastpage
    1431
  • Abstract
    Nonstationary transport effects in III-V compound semiconductors are taken into account by the well-known full dynamic transport model. A solution method for its equations is proposed and applied to a two-dimensional simulation of submicrometer GaAs MESFETs. Stationary and nonstationary results are compared with results from other transport models, namely a simplified dynamic transport model, the energy transport model, and the drift-diffusion model
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; III-V compound semiconductors; full dynamic transport model; nonstationary transport effects; simulation; submicron MESFET; Circuit simulation; Conductors; Cost function; Gallium arsenide; Geometry; Hydrodynamics; Iterative methods; MESFETs; Microwave devices; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2574
  • Filename
    2574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013288