Title :
Gigabit per second operation by monolithically integrated InGaAsP/InP LD-FET
Author :
Kasahara, K. ; Hayashi, J. ; Nomura, H.
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
A single-step grown 1.3 ¿m buried-heterostructure laser and FET are monolithically integrated on a semi-insulating InP substrate. 2 Gbit/s RZ random pulse modulation has been first achieved for monolithic light sources.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; insulated gate field effect transistors; semiconductor junction lasers; FET; III-V semiconductor; InGaAsP/InP BH laser; RZ random pulse modulation; gigabit per second operation; monolithic integration; monolithic light sources; semiinsulating InP substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840425
