• DocumentCode
    1013385
  • Title

    Transient analysis of junction transistors

  • Author

    Gariano, W.E.

  • Author_Institution
    Burroughs Corp. Res. Center, Paoli, Pa.
  • Volume
    6
  • Issue
    1
  • fYear
    1959
  • Firstpage
    90
  • Lastpage
    100
  • Abstract
    The transient behavior of the surface barrier and diffused junction transistors may be represented by an equivalent network consisting of two diodes and a nonlinear base resistance. Expressions for the nonlinear resistance, the base-emitter voltage time response, and the collector current time response are derived and tested experimentally. The equivalent circuit allows us to predict hole storage time for direct-coupled transistor logic (DCTL) circuits.
  • Keywords
    Charge carrier processes; Conductivity; Electron mobility; Electrons; Equations; Equivalent circuits; Logic circuits; P-n junctions; Semiconductor diodes; Surface resistance; Time factors; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1959.14455
  • Filename
    1472498
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013385