Title :
Transient analysis of junction transistors
Author_Institution :
Burroughs Corp. Res. Center, Paoli, Pa.
Abstract :
The transient behavior of the surface barrier and diffused junction transistors may be represented by an equivalent network consisting of two diodes and a nonlinear base resistance. Expressions for the nonlinear resistance, the base-emitter voltage time response, and the collector current time response are derived and tested experimentally. The equivalent circuit allows us to predict hole storage time for direct-coupled transistor logic (DCTL) circuits.
Keywords :
Charge carrier processes; Conductivity; Electron mobility; Electrons; Equations; Equivalent circuits; Logic circuits; P-n junctions; Semiconductor diodes; Surface resistance; Time factors; Transient analysis;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1959.14455
