Title :
Early voltage in very-narrow-base bipolar transistors
Author_Institution :
Dept. of Metall. & Sci. of Mater., Oxford Univ., UK
Abstract :
It is shown that for VLSI devices with very narrow base widths (less than 0.1 mu m), the velocity saturation effect gives a substantial increase in Early voltage and a corresponding beneficial increase in output resistance. The theory is discussed, and practical results are presented.<>
Keywords :
VLSI; bipolar integrated circuits; bipolar transistors; Early voltage; VLSI devices; output resistance; velocity saturation effect; very-narrow-base bipolar transistors; Bipolar transistors; Capacitance; Charge carrier processes; Current density; Doping; Electron mobility; Kirk field collapse effect; Photonic band gap; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
