A lumped model analysis of noise in semiconductor devices

A clear picture of the noise properties of semiconductor devices may be gained through a study of lumped models. When a semiconductor device is represented by a lumped model it is found that all the noise may be accounted for by associating a noise-current generator with each of the conductances appearing in the lumped model. The expressions describing these noise-current generators are easily found and the determination of the device noise properties involves only lumped model analysis. Such analysis applied to a diode model and a transistor model yields results which are in agreement with the results of other authors and with experimental measurements cited by them. The mechanisms considered in this paper do not, however, account for the so-called 1/f noise.