Abstract :
A semiconductor device similar in principle to the injecting-drain-field-effect transistor, having wide ranges of controllable negative resistance which can be used in counting, flip-flop, amplifying, and oscillator circuits, is described. The negative resistance arises from the modulation of the current between two ohmic contacts of circular symmetry, on a flat semiconductor wafer, by the effect of the collection of minority carriers on the pinching potential of a collector electrode. Families of negative resistance, of either the shunt or series type, are obtainable depending upon the mode of operation. Power gains of 60 and thermal dissipation of 1/4 watt have been achieved in liquid cooled units the size of high-frequency transistors. An improved sandwich-type base tab for mounting semiconductor wafers is shown. A theoretical analysis of the operation of the device permits prediction of the effect of various physical parameters upon the static electrical characteristics.
