• DocumentCode
    1014495
  • Title

    Diffused silicon nonlinear capacitors

  • Author

    Bakanowsk, A.E. ; Cranna, N.G. ; Uhlir, A., Jr.

  • Author_Institution
    Bell Telephone Labs., Murray Hill, N. J.
  • Volume
    6
  • Issue
    4
  • fYear
    1959
  • Firstpage
    384
  • Lastpage
    390
  • Abstract
    Diffused silicon nonlinear capacitors have been fabricated by solid-state diffusion. The resulting graded p-n junction is a planar structure which permits low series resistance Rsrelative to the minimum capacitance C_{\\min} , which is measured at a reverse voltage slightly less than the breakdown voltage. A cutoff frequency f_{c} = (2\\pi R_{s}C_{\\min})^{-1} is used as a figure of merit; values up to 150 kmc have been obtained. These "varactor" diodes may be used as UHF and microwave amplifiers and as harmonic generators. The noise figures of the UHF amplifiers are better than the best noise figures obtainable by present electron-tube techniques. These diodes are also efficient harmonic generators.
  • Keywords
    Breakdown voltage; Capacitance measurement; Capacitors; Diodes; Electrical resistance measurement; Noise figure; P-n junctions; Silicon; Solid state circuits; UHF measurements;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1959.14568
  • Filename
    1472611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1014495