Title :
The cylindrical field-effect transistor
Author :
Wegener, H.A.Richard
Author_Institution :
Tung-Sol Electric Res. Labs., Bloomfield, N. J.
Abstract :
The characteristics of a cylindrical field-effect transistor are derived analytically on the basis of Shockley´s theory of the planar field-effect transistor. It is found that the cylindrical device is capable of giving twice the (voltage) amplification factor of that of the planar device. Its frequency behavior should be comparable to that of the Shockley unit. Because of the loss of one degree of freedom, the transconductance and power characteristics of the cylindrical field-effect transistor are sharply limited. Experimental data support the analytical results.
Keywords :
Conductors; Data analysis; Electron devices; FETs; Frequency; Helium; Impedance; Microwave devices; Neodymium; Oscillators; Poisson equations; Semiconductor materials; Space charge; Transconductance; Uncertainty; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1959.14577
