On-Resistance Degradations for Different Stress Conditions in High-Voltage pLEDMOS Transistor With Thick Gate Oxide

Author

Sun, Weifeng ; Wu, Hong ; Shi, Longxing ; Yi, Yangbo ; Li, Haisong

Author_Institution

Southeast Univ., Nanjing

Volume

28

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

631

Lastpage

633

Abstract

The different on-resistance degradations of the p-type lateral extended drain MOS (pLEDMOS) transistor with thick gate oxide for different hot carrier stress conditions have been experimentally investigated for the first time. The difference results from the interface trap generation and the hot electron injection and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor, which has been analyzed in detail using the MEDICI simulator.

Keywords

electric resistance; electron traps; hot carriers; hot electron transistors; power MOSFET; semiconductor device models; MEDICI simulator; high-voltage pLEDMOS transistor; hot carrier stress condition; hot electron injection; hot electron trapping; interface trap generation; on-resistance degradations; p-type lateral extended drain MOS transistor; thick gate oxide; Application specific integrated circuits; Degradation; Driver circuits; Electron traps; Hot carriers; MOSFETs; Medical simulation; Secondary generated hot electron injection; Stress measurement; Voltage; Hot electron injection and trapping; on-resistance degradation; p-type lateral extended drain MOS (pLEDMOS); thick gate oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.898489

Filename

4252222