Title :
A p-n-p high-frequency silicon transistor produced by double diffusion and Oxide masking techniques
Author_Institution :
Texas Instruments, Inc., Dallas, Texas
fDate :
4/1/1960 12:00:00 AM
Keywords :
Cutoff frequency; Diodes; Electrical resistance measurement; Etching; Gallium arsenide; Geometry; Germanium; Gold; Pollution measurement; Semiconductor diodes; Silicon; Solid state circuits; Switches;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1960.14613
