Title :
Demonstration of widely tunable single-chip 10-Gb/s laser-modulators using multiple-bandgap InGaAsP quantum-well intermixing
Author :
Raring, James W. ; Skogen, Erik J. ; Johansson, Leif A. ; Sysak, Matt N. ; Barton, Jonathon S. ; Masanoviae, M.L. ; Coldren, Larry A.
Author_Institution :
Mater. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
fDate :
7/1/2004 12:00:00 AM
Abstract :
High-speed wavelength-agile laser-modulators were fabricated for the first time using a quantum-well intermixing processing platform for monolithic integration. Over 19-GHz 3-dB modulator bandwidth was achieved and 10-Gb/s error-free transmission was demonstrated through 75 km of standard fiber.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; integrated optics; ion implantation; laser tuning; optical communication equipment; quantum well lasers; wavelength division multiplexing; 10 Gbit/s; 75 km; InGaAsP; InGaAsP quantum-well; electroabsorption modulators; ion implantation; laser tuning; monolithic integration; multiple-bandgap quantum well; quantum well-intermixing; semiconductor lasers; single-chip laser modulators; wavelength-division multiplexing; widely tunable laser-modulators; Fiber lasers; Indium phosphide; Laser tuning; Mirrors; Monolithic integrated circuits; Optical transmitters; Quantum well devices; Quantum well lasers; Semiconductor lasers; Tunable circuits and devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.828853
