DocumentCode :
1015249
Title :
Improvement of the direct modulation behavior of semiconductor lasers by using a holding beam
Author :
Morthier, G. ; Moeyersoon, B.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ. IMEC, Gent, Belgium
Volume :
16
Issue :
7
fYear :
2004
fDate :
7/1/2004 12:00:00 AM
Firstpage :
1616
Lastpage :
1618
Abstract :
We show theoretically that the direct modulation properties of semiconductor lasers can be significantly improved by the injection of a so-called holding beam-a continuous-wave beam at the transparency wavelength of the gain medium. Both the small-signal and the large-signal behavior are investigated.
Keywords :
electro-optical modulation; laser beams; optical pulse shaping; semiconductor lasers; continuous wave beam; direct modulation behavior; holding beam; laser modulation; optical pulse shaping; semiconductor lasers; transparency wavelength; Charge carrier lifetime; Chirp modulation; Damping; Laser beams; Laser theory; Optical modulation; Pulse shaping methods; Resonance; Resonant frequency; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2004.829534
Filename :
1308242
Link To Document :
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