DocumentCode :
1015383
Title :
An analysis of switching effects in high-power diffused-base silicon transistors
Author :
Messenger, G.C.
Author_Institution :
Hughes Products, Los Angeles, Calif.
Volume :
7
Issue :
2
fYear :
1960
fDate :
4/1/1960 12:00:00 AM
Firstpage :
115
Lastpage :
115
Keywords :
Bandwidth; Circuit noise; Coupling circuits; Frequency; Germanium; Life testing; Noise figure; Noise measurement; Power amplifiers; Silicon; Stability; Switches; Switching circuits; Telephony; Waveguide discontinuities;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1960.14657
Filename :
1472764
Link To Document :
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