DocumentCode :
1015392
Title :
Reduction of fixed loss in buried-channel CCD´s operating at 77 K
Author :
Bendapudi, S. ; Jha, Mithilesh ; Govindacharyulu, P.A. ; Zarabi, M.J.
Author_Institution :
Semicond.. Complex Ltd., Punjab, India
Volume :
14
Issue :
11
fYear :
1993
Firstpage :
527
Lastpage :
529
Abstract :
The authors describe studies on charge transfer loss in buried-channel charge-coupled devices (BCCD´s) at 77 K. Experiments suggest that the fixed loss occurs mostly during the last transfer from phase clock to output diffusion. It is shown that this loss can be reduced by reducing the doping concentration in the buried channel and introducing a potential step in the middle of the storage well along the charge-flow direction. Transfer inefficiencies as low as 8.6*10/sup -5/ without fat zero at 3-MHz clock rate are observed at 77 K.<>
Keywords :
CCD image sensors; infrared imaging; losses; 3-MHz clock rate; 77 K; IR image sensors; buried channel doping concentration reduction; buried-channel CCD; charge transfer loss; fixed loss reduction; output diffusion; phase clock; potential step; storage well; Charge coupled devices; Charge transfer; Clocks; Cooling; Doping; Frequency; Infrared image sensors; Shift registers; Temperature sensors; Testing;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.258004
Filename :
258004
Link To Document :
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