• DocumentCode
    1015502
  • Title

    Improvement of the electrical properties of metal-SiO2-silicon capacitors by a preoxidation HF/ethanol clean of the substrate

  • Author

    Prom, J.L. ; Morfouli, P. ; Kassmi, K. ; Pananakakis, G. ; Sarrabayrouse, G.

  • Author_Institution
    Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
  • Volume
    138
  • Issue
    3
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    321
  • Lastpage
    324
  • Abstract
    The influence of a HF-ethanol dip as the last preoxidation cleaning step in the fabrication of metal-thin insulator-silicon capacitors is investigated. The experimental procedure and main advantages of this cleaning step for the electrical properties such as breakdown characteristics, I/V characteristics and interface state density are presented
  • Keywords
    capacitors; electric breakdown of solids; electronic density of states; elemental semiconductors; interface electron states; metal-insulator-semiconductor devices; silicon; silicon compounds; substrates; surface treatment; HF; I/V characteristics; MIS devices; Si-SiO2; breakdown characteristics; electrical properties; fabrication; interface state density; metal-SiO2-Si capacitors; preoxidation HF/ethanol clean; substrate cleaning;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    258020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1015502