A 2.5-Gb/s receiver OEIC in 0.6-μm BiCMOS technology

Author

Swoboda, R. ; Zimmermann, H.

Author_Institution

Vienna Univ. of Technol., Austria

Volume

16

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1730

Lastpage

1732

Abstract

A monolithically integrated optical receiver circuit in a 0.6-μm silicon bipolar complementary metal oxide semiconductor technology with f_T=25 GHz is presented. It incorporates a vertical p-i-n photodetector with a responsivity of 0.36 and 0.26 A/W at 660 and 850 nm, respectively. At these wavelengths, sensitivities of -23.5 and -21.2 dBm, respectively, at a bit rate of 2.5 Gb/s and a bit-error rate of 10/sup -9/ are achieved. The transimpedance gain of the receiver is 18 k/spl Omega/ and overall -3-dB bandwidths of 1.35 and 1.05 GHz at 660 and 850 nm, respectively, are observed.

Keywords

BiCMOS analogue integrated circuits; elemental semiconductors; error statistics; integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; photodetectors; silicon; 0.6 mum; 1.05 GHz; 1.35 GHz; 2.5 Gbit/s; 25 GHz; 660 nm; 850 nm; BiCMOS; OEIC; Si; bit-error rate; integrated optical receiver circuit; p-i-n photodetector; silicon bipolar complementary metal oxide semiconductor; transimpedance gain; Bandwidth; BiCMOS integrated circuits; Bit error rate; Bit rate; Integrated circuit technology; Optical receivers; Optoelectronic devices; PIN photodiodes; Photodetectors; Silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.828382

Filename

1308280